(Hong Kong)
Product Summary
The 2SC5707S-TL is a NPN Epitaxial Planar Silicon Transistor.
Parametrics
Absolute maximum ratings: (1)Collector-to-Base Voltage:80V; (2)Collector-to-Emitter Voltage:80V; (3)Collector-to-Emitter Voltage:50V; (4)Emitter-to-Base Voltage:6V; (5)Collector Current:8A; (6)Collector Current (Pulse):11A; (7)Base Current:2A; (8)Collector Dissipation:1.0W, Tc=25℃:15W; (9)Junction Temperature:150℃; (10)Storage Temperature:-55℃ to +150℃.
Features
Features: (1)Adoption of FBET, MBIT process; (2)Large current capacitance; (3)Low collector-to-emitter saturation voltage; (4)High-speed switching; (5)High allowable power dissipation.
Diagrams
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 2SC5000 |
Other |
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Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
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Data Sheet |
Negotiable |
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2SC5003 |
Other |
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Data Sheet |
Negotiable |
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2SC5004 |
Other |
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Data Sheet |
Negotiable |
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