Product Summary

The AOP605 is a Complementary Enhancement Mode Field Effect Transistor. The AOP605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFET form a high-speed power inverter, suitable for a multitude of applications. The AOP605 is electrically identical.

Parametrics

AOP605 absolute maximum ratings: (1)Drain-Source Voltage: 30V for N-channel; -30V for P-channel; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current TA=25℃: 7.5A; -6.6A; (4)Continuous Drain Current TA=70℃: 76A; -5.3A; (5)Pulsed Drain Current: 30A; -30A; (6)Power Dissipation TA=25℃: 2.5W; (7)Power Dissipation TA=70℃: 1.6W; (8)Junction and Storage Temperature Range: -55℃ to 150℃.

Features

AOP605 features: (1)VDS (V) = 30V for N-channel; -30V for P-channel; (2)ID = 7.5A (VGS = 10V); -6.6A (VGS = -10V); (3)RDS(ON); (4)<28mW (VGS = 10V); <35mW (VGS = -10V); (5)<43mW (VGS = 4.5V); <58mW (VGS = -4.5V).

Diagrams

AOP605 Pin Configuration

Image Part No Mfg Description Data Sheet Download Pricing
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AOP605
AOP605


MOSFET N/P-CH COMPL 30V 8-PDIP

Data Sheet

Negotiable 
AOP605L
AOP605L

Other


Data Sheet

Negotiable