(Hong Kong)
Product Summary
The FDR8305N is an N-Channel 2.5V specified MOSFET using Fairchild Semiconductor’s advanced PowerTrench process. It has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Parametrics
FDR8305N absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 20V; (2)Gate-Source Voltage, VGSS: ±8V; (3)Drain Current, Continuous, ID: 4.5A; (4)Drain Current, Pulsed, ID: 20A; (5)Power Dissipation for Single Operation, PD: 0.8W; (6)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
FDR8305N features: (1)4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.; (2)Low gate charge (16.2nC typical).; (3)Fast switching speed.; (4)High performance trench technology for extremely low RDS(ON); (5)Small footprint (38% smaller than a standard SO-8); (6)low profile package (1 mm thick); (7)power handling capability similar to SO-8.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDR8305N |
Fairchild Semiconductor |
MOSFET SSOT-8 N-CH DUAL 20V |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FDR8305N |
Fairchild Semiconductor |
MOSFET SSOT-8 N-CH DUAL 20V |
Data Sheet |
Negotiable |
|
||||
|
FDR8308P |
Fairchild Semiconductor |
MOSFET SSOT-8 P-CH DUAL -20 |
Data Sheet |
Negotiable |
|
||||
 |
FDR8309P |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||
|
FDR8321L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FDR836P |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||
|
FDR838P |
Fairchild Semiconductor |
MOSFET SSOT-8 P-CH -20V |
Data Sheet |
Negotiable |
|
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