(Hong Kong)
Product Summary
The FQP6N80C is a N-Channel enhancement mode power field effect transistor. It is produced using proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQP6N80C is well suited for high efficiency switch mode power supplies.
Parametrics
FQP6N80C absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 800 V; (2)ID, Drain Current - Continuous (TC = 25℃): 5.5A; Continuous (TC = 100℃): 3.2A; (3)IDM, Drain Current - Pulsed: 22A; (4)VGSS, Gate-Source Voltage: ±30V; (5)EAS, Single Pulsed Avalanche Energy: 680 mJ; (6)IAR, Avalanche Current: 5.5 A; (7)EAR, Repetitive Avalanche Energy: 15.8 mJ; (8)dv/dt, Peak Diode Recovery dv/dt: 4.5 V/ns; (9)PD, Power Dissipation (TC = 25℃): 158W; Derate above 25℃: 1.27W/℃; (10)TJ, TSTG, Operating and Storage Temperature Range: -55 to +150℃; (11)TL, Maximum lead temperature for soldering purposes, 1/8 inch from case for 5 seconds: 300℃.
Features
FQP6N80C features: (1)5.5A, 800V, RDS(on) = 2.5Ω@VGS = 10 V; (2)Low gate charge ( typical 21 nC); (3)Low Crss ( typical 8 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FQP6N80C |
Fairchild Semiconductor |
MOSFET 800V N-Ch Q-FET advance C-Series |
Data Sheet |
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| Image | Part No | Mfg | Description | |
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Data Sheet |
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