(Hong Kong)
Product Summary
The FQPF47P06 is a P-Channel enhancement mode power field effect transistor which is produced using Fairchild proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. The FQPF47P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Parametrics
FQPF47P06 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -60 V; (2)ID Drain Current - Continuous (TC = 25℃): -30 A; Continuous (TC = 100℃): -21.2 A; (3)IDM Drain Current - Pulsed: -120 A; (4)VGSS Gate-Source Voltage: ± 25 V; (5)EAS Single Pulsed Avalanche Energy: 820 mJ; (6)IAR Avalanche Current: -30 A; (7)EAR Repetitive Avalanche Energy: 6.2 mJ; (8)dv/dt Peak Diode Recovery dv/dt: -7.0 V/ns; (9)PD Power Dissipation (TC = 25℃): 62 W; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +175 ℃; (11)Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
FQPF47P06 features: (1)-30A, -60V, RDS(on) = 0.026Ω @VGS = -10 V; (2)Low gate charge ( typical 84 nC); (3)Low Crss ( typical 320 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQPF47P06 |
Fairchild Semiconductor |
MOSFET 60V P-Channel QFET |
Data Sheet |
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FQPF47P06YDTU |
Fairchild Semiconductor |
MOSFET -60V -30A P-Channel |
Data Sheet |
Negotiable |
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