Product Summary
The AO4433 is a P-Channel Enhancement Mode Field Effect Transistor. The AO4433 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. Standard product AO4433 is Pb-free (meets ROHS & Sony 259 specifications).
Parametrics
AO4433 absolute maximum ratings: (1)drain-source voltage, VDS: -30V; (2)gate-source voltage, VGS: ±25V; (3)continuous drain current, ID: -11A at TA=25℃; -9.7A at TA=70℃; (4)pulsed drain current, IDM: -50A; (5)power dissipation, PD: 3W at TA=25℃; 2.1W at TA=70℃; (6)junction and storage temperature range, TJ, TSTG: -55 to 150℃.
Features
AO4433 features: (1)VDS (V) = -30V; (2)ID = -11 A (VGS = -20V); (3)RDS(ON) < 14mΩ (VGS = -20V); (4)RDS(ON) < 18mΩ (VGS = -10V); (5)ESD Rating: 1.5KV HBM.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
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AO4433 |
MOSFET P-CH -30V -11A 8-SOIC |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||
AO4401 |
Other |
Data Sheet |
Negotiable |
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AO4402 |
MOSFET N-CH 20V 20A 8SOIC |
Data Sheet |
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AO4403 |
MOSFET P-CH -30V -6.1A 8-SOIC |
Data Sheet |
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AO4404 |
Other |
Data Sheet |
Negotiable |
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AO4404B |
MOSFET N-CH 30V 8.5A 8-SOIC |
Data Sheet |
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AO4405 |
Other |
Data Sheet |
Negotiable |
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